Abstract
Oxide thin films and interfaces have attracted considerable interestnot only because of the rich physics it can host but also because ofthe possibility of integrating materials with different properties toachieve new multifunctionality that can be used for future generationof high speed, low power consuming and small size spintronics devices.Recently discovered topologically protected non-trivial magnetic spinstructures namely “skyrmions†have shown their potential for low powerconsuming, small size and high speed spintronics devices. So far,formation of skyrmionic crystals have been observed in chiralnoncentrosymmetric B20-type compounds mediated by the Dzyaloshinskii-Moriya (D-M)interaction. On the other hand, in centrosymmetriccrystals without D-M interaction, such nontrivial spin structure hasbeen proposed to occur, yet compelling evidence has remained to bepresented. We have shown the emergence of such non-trivial spintexture in centrosymmetric simple cubic perovskite SrFeO3 thin filmsthrough the combine methods of topological hall effect andresonant soft x-ray diffraction measurements. On the other hand, wehave observed that isoelectronic BaFeO3 is an unusual ferromagneticinsulator. A systematic doping of Sr in Ba – site give rise toinsulator-metal to ferromagnetic-skyrmionic transition, throughpossible skyrmionic-insulating phase. Using controlledSr0.5Ba0.5FeO3-La0.7Sr0.3MnO3 interface we have shown the possibility ofinducing non-trivial spin structure in ferromagnetic La0.7Sr0.3MnO3 layer,that has been detected by the topological transport through thatinterface. In this presentation I will talk about:1. A unique example of magnetic skyrmionic crystal formation in acentrosymmetric perovskite oxide and its detection through“Topological Hall Effect (THE)â€.2. BaFeO3 to SrFeO3 : Ferromagnetic insulator to skyrmionic metaltransition.3. Topological transport at Sr0.5Ba0.5FeO3-La0.7Sr0.3MnO3 interface.Double perovskite oxide film and interface.
