Abstract
Nano-research requires the ability to form and characterize nanostructures. The precision and accuracy required to produce structures in the nanometer scale and to characterize them demand commensurate tools. Although several techniques (e.g. wet and dry etching techniques, electron-beam lithography, etc.) have been employed for the fabrication of nanostructures, ion irradiation has also been demonstrated to be promising tool for the fabrication of uniform and highly ordered quantum dot arrays. Ion irradiation is a promising tool for nanopatterning of materials’ surfaces because of its compatibility and reproducibility with easily controllable growth conditions. It has very high spatial selectivity and is not governed by chemical compatibility. Thus, one can tune physical properties of a material by varying the ion species and energy, the charge state, and the ion fluence. The present talk will deal with wide range of ion energy, starting from keV ions (at IOP, Krakow, Poland) to a few MeV ions (at IOP, Bhubaneswar) to hundreds of MeV ions (at IUAC, New Delhi) to demonstrate irradiation-induced nanoscale patterning of semiconductors (Ge, Si, GaAs, InP, GaSb, InSb, InAs) and alkali halide system (KBr).
